Title :
High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules
Author :
Frateschi, N.C. ; Zhang, J. ; Choi, W.J. ; Gebretsadik, H. ; Jambunathan, R. ; Bond, A.E.
Author_Institution :
T-Networks Inc., Allentown, PA, USA
Abstract :
Long reach C-band 10 Gbit/s uncooled operation of laser integrated to InGaAlAs electroabsorption modulator packages is presented. Using a design employing InGaAlsAs multi-quantum wells (MQW), uncooled operation over an 80°C temperature range, with modulated output power in excess of 0 dBm, 1.7 dB maximum change in extinction ratio, and with a dispersion penalty of 1 dB for 1600 ps/nm propagation is demonstrated.
Keywords :
aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; quantum well lasers; 10 Gbit/s; InGaAlAs; InGaAlAs MQW electroabsorption modulator; dispersion penalty; laser-integrated modules; modulated output power; semiconductor amplifier; uncooled C-band modulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040099
