• DocumentCode
    875313
  • Title

    The Ceneration of Field Sensitive Interface States in Commercial CMOS Devices

  • Author

    Crowley, John L. ; Dries, Lawrence J.

  • Author_Institution
    Lockheed Palo Alto Research Laboratory Palo Alto, California 94304
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1267
  • Lastpage
    1272
  • Keywords
    CMOS process; Capacitance-voltage characteristics; Energy measurement; Frequency measurement; Interface states; MOS capacitors; Manufacturing processes; Phase change materials; Stress measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333494
  • Filename
    4333494