DocumentCode
875313
Title
The Ceneration of Field Sensitive Interface States in Commercial CMOS Devices
Author
Crowley, John L. ; Dries, Lawrence J.
Author_Institution
Lockheed Palo Alto Research Laboratory Palo Alto, California 94304
Volume
31
Issue
6
fYear
1984
Firstpage
1267
Lastpage
1272
Keywords
CMOS process; Capacitance-voltage characteristics; Energy measurement; Frequency measurement; Interface states; MOS capacitors; Manufacturing processes; Phase change materials; Stress measurement; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1984.4333494
Filename
4333494
Link To Document