مرکز منطقه ای اطلاع رساني علوم و فناوري - Carrier removal in silicon as the cause of radiation-induced fluctuations in the base resistance and emitter efficiency of silicon transistors

DocumentCode :

875343

Title :

Carrier removal in silicon as the cause of radiation-induced fluctuations in the base resistance and emitter efficiency of silicon transistors

Author :

Mayburg, S.

Volume :

Issue :

fYear :

1965

Firstpage :

1653

Lastpage :

1654

Keywords :

Conductivity; Electrical resistance measurement; Electrons; Fluctuations; Gamma rays; Impurities; Lifetime estimation; Probes; Silicon; Solids;

fLanguage :

English

Journal_Title :

Proceedings of the IEEE

Publisher :

ieee

ISSN :

0018-9219

Type :

jour

DOI :

10.1109/PROC.1965.4295

Filename :

1446225

Link To Document :