DocumentCode
875343
Title
Carrier removal in silicon as the cause of radiation-induced fluctuations in the base resistance and emitter efficiency of silicon transistors
Author
Mayburg, S.
Volume
53
Issue
10
fYear
1965
Firstpage
1653
Lastpage
1654
Keywords
Conductivity; Electrical resistance measurement; Electrons; Fluctuations; Gamma rays; Impurities; Lifetime estimation; Probes; Silicon; Solids;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1965.4295
Filename
1446225
Link To Document