• DocumentCode
    875343
  • Title

    Carrier removal in silicon as the cause of radiation-induced fluctuations in the base resistance and emitter efficiency of silicon transistors

  • Author

    Mayburg, S.

  • Volume
    53
  • Issue
    10
  • fYear
    1965
  • Firstpage
    1653
  • Lastpage
    1654
  • Keywords
    Conductivity; Electrical resistance measurement; Electrons; Fluctuations; Gamma rays; Impurities; Lifetime estimation; Probes; Silicon; Solids;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1965.4295
  • Filename
    1446225