DocumentCode
875346
Title
New method of reducing instability in insulated-gate field-effect transistors
Author
Bradley, Jonathan
Volume
3
Issue
11
fYear
1967
fDate
11/1/1967 12:00:00 AM
Firstpage
526
Lastpage
528
Abstract
In thin-film field-effect transistors, instability caused by ionic conduction in the gate insulator should be reduced if the gate insulator is replaced by a semi-insulating material with a high free-electron concentration and low electron mobility
Keywords
transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19670413
Filename
4208630
Link To Document