Title :
Device characteristics of Si PMOSFETs with decaborane (B10H14) or elemental B extension implants
Author :
Gossmann, H.-J.L. ; Agarwal, A. ; Perel, A.S.
Author_Institution :
Axcelis Technol., Beverly, MA, USA
Abstract :
PMOS transistors with coded gate-lengths down to 100 nm have been fabricated using either 5.6 keV 2×1013 cm-2 decaborane (B10H14) or 0.5 keV 2×1014 cm-2 elemental B for the extension implant. DC device characteristics are essentially identical between the two implant processes, indicating that decaborane is a viable alternative to elemental B in this area.
Keywords :
MOSFET; boron; boron compounds; doping profiles; ion implantation; semiconductor device measurement; 0.5 keV; 100 nm; 5.6 keV; B10H14 extension implants; DC device characteristics; PMOS transistors; Si PMOSFET; Si:B; Si:B10H14; coded gate-lengths; decaborane extension implants; elemental B extension implants; implant processes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040080
