• DocumentCode
    875363
  • Title

    Method for determination of carrier capture cross-sections at Si/SiO2 interface

  • Author

    Wang, L. ; Neugroschel, A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
  • Volume
    40
  • Issue
    2
  • fYear
    2004
  • Firstpage
    148
  • Lastpage
    149
  • Abstract
    A simple DC method for measurement of the capture cross-sections at the Si/SiO2 interface is presented. The method combines the measurement of the interface recombination current under the gate of the MOS transistor with the measurement of the subthreshold slope. The results are in good agreement with previous results obtained by AC small-signal and transient methods.
  • Keywords
    carrier mobility; elemental semiconductors; interface states; semiconductor-insulator boundaries; silicon; silicon compounds; AC small-signal methods; AC transient methods; DC method; Si-SiO2; Si/SiO2 interface; carrier capture cross-sections; interface recombination current; subthreshold slope;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040092
  • Filename
    1263126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875363