Semiconductor Failure Threshold Estimation Problem in Electromagnetic Assessment

Present semiconductor failure models to predict the one-microsecond square-wave power failure level for use with system electromagnetic (EM) assessments and hardening design are incomplete. This is because for a majority of device types there is insufficient data readily available in a composite data source to quantify the model parameters and the inaccuracy of the models cause complications in definition of adequate hardness margins and quantification of EM performance. This paper presents new semiconductor failure models which use a generic approach that are an integration and simplification of many present models. This generic approach uses two categorical models: one for diodes and transistors, and one for integrated circuits. The models were constructed from a large database of semiconductor failure data. The approach used for constructing diode and transistor failure level models is based on device rated power and are simple to use and universally applicable. The model predicts the value of the 1 ¿ second failure power to be used in the power failure models P = Kt-1/2 or P = K1t-1 + K2t-1/2 + K3. The failure power is directly related to the CW ´rated power´ by Failure Power = {10 × ´rated power´ rp ¿ 10 watts 100 10 < RP < 100 watts ´rated power´ RP ¿ 100 watts.. The generic IC failure level model applicable to any IC, except VLSI design, was constructed using least square modeling and conventional techniques for calculating confidence levels.