Title :
Total Dose and Dose Rate Radiation Characterization of EPI-CMOS Radiation Hardened Memory and Microprocessor Devices
Author :
Gingerich, B.L. ; Hermsen, J.M. ; Lee, J.C. ; Schroeder, J.E.
Author_Institution :
Harris Semiconductor P. O. Box 883 Melbourne, FL 32901
Abstract :
The process, circuit discription, and total dose radiation characteristics are presented for two second generation hardened 4K EPI-CMOS RAMs and a first generation 80C85 microprocessor. Total dose radiation performance is presented to 10M rad-Si and effects of biasing and operating conditions are discussed. The dose rate sensitivity of the 4K RAMs is also presented along with single event upset (SEU) test data.
Keywords :
CMOS process; Circuits; Degradation; Fabrication; Laboratories; Microprocessors; Radiation hardening; Random access memory; Resistors; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333506
