Empirical formulas for design and optimization of 1.5 mu m InGaAs/InGaAsP strained-quantum-well lasers

Author

Lin, C.H. ; Lo, Y.H.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

5

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

288

Lastpage

290

Abstract

The effects of strain and number of quantum wells on optical gain, differential gain, and nonlinear gain coefficient in 1.55- mu m InGaAs/InGaAsP strained-quantum-well lasers are theoretically investigated. Well-approximated empirical expressions are proposed to model these effects. Using these formulas, one can easily and accurately predict the performance of a laser diode for a given structure. Therefore, these empirical formulas are useful tools for design and optimization of strained quantum well lasers. As a general design guideline revealed from the empirical formulas, the threshold current is reduced with the compressive strain, and the modulation bandwidth is most efficiently increased with the number of wells.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; optical design techniques; optimisation; semiconductor lasers; 1.55 micron; IR; InGaAs-InGaAsP; SQW; compressive strain; differential gain; diode laser design; laser optimization; modulation bandwidth; nonlinear gain coefficient; optical gain; quantum well number; semiconductors; strained-quantum-well lasers; threshold current; Capacitive sensors; Design optimization; Diode lasers; Indium gallium arsenide; Laser modes; Laser theory; Nonlinear optics; Optical design; Quantum mechanics; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.205614

Filename

205614