• DocumentCode
    875615
  • Title

    Physical Mechanisms Contributing to Device "Rebound"

  • Author

    Schwank, J.R. ; Winokur, P.S. ; McWhorter, P.J. ; Sexton, F.W. ; Dressendorfer, P.V. ; Turpin, D.C.

  • Author_Institution
    Sandia National Laboratories Division 2144 Albuquerque, New Mexico 87185
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1434
  • Lastpage
    1438
  • Abstract
    The physical mechanisms that produce rebound have been identified. The positive increase in threshold voltage during a bias anneal is due to annealing of oxide trapped charge. Rebound can be predicted by measuring the contribution to the threshold voltage from radiation-induced interface states immediately after irradiation.
  • Keywords
    Annealing; Interface states; Ionizing radiation; Laboratories; Least squares approximation; MOS devices; Photonic band gap; Silicon; System testing; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333525
  • Filename
    4333525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875615