• DocumentCode
    875689
  • Title

    Time-domain method of measuring transistor parameters

  • Author

    Mar, Jerry

  • Volume
    6
  • Issue
    4
  • fYear
    1971
  • fDate
    8/1/1971 12:00:00 AM
  • Firstpage
    223
  • Lastpage
    226
  • Abstract
    A method for the two-lump charge-control transistor model is presented. The parameter values are obtained by fitting the model equations to some standard digital responses. This technique provides a natural way of obtaining appropriate constant parameter values to use for typical digital situations, even when the actual parameters vary over the digital response. The method described here does not require expensive repetitive nonlinear circuit analysis runs for the fitting. Instead, the nonlinear circuit equations are never solved since the fitting technique is applied to the basic equations themselves rather than to their solutions. Sensitivity studies indicate that the technique requires only simple instrumentation and that automated measurements could be readily performed using a computer-controlled dynamic test system.
  • Keywords
    Computer-aided circuit analysis; Modelling; Semiconductor device models; Time-domain analysis; Transistors; computer-aided circuit analysis; modelling; semiconductor device models; time-domain analysis; transistors; Automatic testing; Circuit analysis; Circuit testing; Instruments; Nonlinear circuits; Nonlinear dynamical systems; Nonlinear equations; Performance evaluation; System testing; Time domain analysis;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1971.1050171
  • Filename
    1050171