• DocumentCode
    875733
  • Title

    A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics

  • Author

    Galloway, K.F. ; Gaitan, M. ; Russell, T.J.

  • Author_Institution
    Department of Electrical Engineering University of Maryland College Park, MD 20742 and Semiconductor Devices and Circuits Division National Bureau of Standards Gaithersburg, MD 20899
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1497
  • Lastpage
    1501
  • Abstract
    A simple model to describe radiation effects on MOSFET electrical characteristics is presented. The key assumption is that mobility degradation in an enhancement mode MOSFET is predominantly due to charged interface traps. Model predictions are compared with measured values of interface trap density and device I - V curves.
  • Keywords
    Degradation; Electric variables; Electron traps; Ionizing radiation; MOS devices; MOSFET circuits; Rough surfaces; Scattering; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333537
  • Filename
    4333537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875733