Title :
A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics
Author :
Galloway, K.F. ; Gaitan, M. ; Russell, T.J.
Author_Institution :
Department of Electrical Engineering University of Maryland College Park, MD 20742 and Semiconductor Devices and Circuits Division National Bureau of Standards Gaithersburg, MD 20899
Abstract :
A simple model to describe radiation effects on MOSFET electrical characteristics is presented. The key assumption is that mobility degradation in an enhancement mode MOSFET is predominantly due to charged interface traps. Model predictions are compared with measured values of interface trap density and device I - V curves.
Keywords :
Degradation; Electric variables; Electron traps; Ionizing radiation; MOS devices; MOSFET circuits; Rough surfaces; Scattering; Threshold voltage; Transconductance;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333537
