Unified modeling of field-effect devices

This paper describes a unifying approach to the derivation of models for field-effect devices. The most general model yielded by this approach contains, as special cases, models for the small- and large-signal behavior of the two major types of field-effect transistor and of other related devices such as the semiconductor current limiter and the pinch resistor. From this most general model emerge, by application of particular approximations and constraints, several models proposed earlier for use in computer- aided circuit analysis. The unifying approach thus demonstrates the relationships borne among various existing models for field- effect devices. In addition, it provides a wide diversity of new models of different complexities and degrees of accuracy.