Title :
Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and N+-Si-N+ Structures
Author_Institution :
Electronic Material Sciences Division Naval Ocean Systems Center, San Diego, CA 92152
Keywords :
Circuits; Conducting materials; FETs; Gallium arsenide; Photoconducting devices; Photoconductivity; Pulse modulation; Radiation effects; Scanning electron microscopy; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333538
