Title :
An Investigation into Radiation Induced Second Breakdown in N Channel Power MOSFETs
Author :
Jobson-Scott, David M
Author_Institution :
Atomic Weapons Research Establishment, Aldermaston, England
Abstract :
The second breakdown phenomenon in an N channel power mosfet, induced by transient gamma irradiation, is demonstrated in a commercial device. A specially developed radiation hard power mosfet (Mullard Ltd) is shown to be much less susceptible.
Keywords :
Atomic measurements; Breakdown voltage; Circuit testing; Degradation; Electric breakdown; MOSFETs; Photoconductivity; Resistors; Transconductance; Weapons;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333539
