DocumentCode
875750
Title
An Investigation into Radiation Induced Second Breakdown in N Channel Power MOSFETs
Author
Jobson-Scott, David M
Author_Institution
Atomic Weapons Research Establishment, Aldermaston, England
Volume
31
Issue
6
fYear
1984
Firstpage
1508
Lastpage
1512
Abstract
The second breakdown phenomenon in an N channel power mosfet, induced by transient gamma irradiation, is demonstrated in a commercial device. A specially developed radiation hard power mosfet (Mullard Ltd) is shown to be much less susceptible.
Keywords
Atomic measurements; Breakdown voltage; Circuit testing; Degradation; Electric breakdown; MOSFETs; Photoconductivity; Resistors; Transconductance; Weapons;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1984.4333539
Filename
4333539
Link To Document