DocumentCode :
875780
Title :
Characterization of 23-percent efficient silicon solar cells
Author :
Green, Martin A. ; Blakers, Andrew W. ; Zhao, Jianhua ; Milne, Adele M. ; Wang, Aihua ; Dai, Ximing
Author_Institution :
Joint Microelectron. Res. Centre, New South Wales Univ., Kensington, NSW, Australia
Volume :
37
Issue :
2
fYear :
1990
fDate :
2/1/1990 12:00:00 AM
Firstpage :
331
Lastpage :
336
Abstract :
A silicon solar cell structure, PERC (passivated emitter and rear cell), has very recently demonstrated energy conversion efficiency above 23%. A number of interesting features of the PERC cell design are discussed. Rear contact design is based on a balance between the beneficial effects of small sparsely spaced contact points upon the open circuit voltage and short-circuit current of the cell and the corresponding negative effects upon cell fill factor. The noncontacted regions of the rear surface are held in weak depletion by an optically isolated but electrically connected rear Al reflector. Once bulk injection levels become appreciable, the disadvantage of this surface condition disappears. The structure incorporates a reasonably effective light-trapping scheme, although there remains scope for improvements in this area. Along with other improvements, efficiency approaching 24% seems feasible with the present cell structure. If a processing regime can be found which allows boron passivation of the contact holes or the entire rear surface without loss of the present exceptionally high bulk lifetimes, efficiencies above 24% are likely
Keywords :
elemental semiconductors; passivation; silicon; solar cells; 23 percent; Al reflector; B passivation; PERC; Si; bulk injection levels; cell design; contact design; energy conversion efficiency; features; high bulk lifetimes; light-trapping scheme; open circuit voltage; passivated emitter; rear cell; semiconductors; short-circuit current; solar cell structure; surface condition; Australia Council; Conductivity; Intrusion detection; Photovoltaic cells; Photovoltaic systems; Reflectivity; Rough surfaces; Silicon; Solar power generation; Surface roughness;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.46361
Filename :
46361
Link To Document :
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