Title :
Simplified backside-contact solar cells
Author :
Sinton, Ronald A. ; Swanson, Richard M.
Author_Institution :
Stanford Univ., CA, USA
fDate :
2/1/1990 12:00:00 AM
Abstract :
Experimental and modeling results for a family of simplified backside-contact designs are presented. This simplification hinges upon the demonstration of a self-aligned metalization technique as well as an optimization of heavily doped, compensated regions in the solar cell. The resulting devices can be fabricated without mask alignment and require as few as one mask. A 10.5 cm2 one-sun cell that achieves 21.9% efficiency is presented as an example of the potential for these device designs. Prospective performance for concentrator cells of this type is also discussed
Keywords :
elemental semiconductors; silicon; solar cells; 21.9 percent; Si; backside-contact solar cells; compensated regions; concentrator cells; efficiency; fabricated without mask alignment; heavily doped; modeling results; one-sun cell; optimization; performance; self-aligned metalization technique; semiconductors; simplification; Coatings; Costs; Electrical resistance measurement; Fasteners; Metallization; Photovoltaic cells; Silicon; Sun; Technological innovation; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
