Title :
A Comparison of Ionizing Radiation and Hot Electron Effects in MOS Structures
Author :
Mikawa, R.E. ; Lenahan, P.M.
Author_Institution :
Sandia National Laboratories Albuquerque, New Mexico 87185
Keywords :
Corona; Degradation; Electrons; Interface states; Ionizing radiation; MOS devices; Paramagnetic resonance; Silicon; Threshold voltage; Very large scale integration;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333553
