Dual composite mesh method for semiconductor field calculations

The use of a Voronoi-Delaunay diagram as a dual composite mesh system for applying a united discretization method to the governing equations of a semiconductor device is described. The approach consists of discretizing the Poisson equation on the Voronoi mesh system while the continuity equations are solved on the Delaunay mesh system based on a transformation of the current density into a stream function. Compared with a conventional method based on the Scharfetter (1969) and Gummel (1964) discretization scheme, the proposed approach proves to yield results of equivalent accuracy.