Title :
A fully decoded 2048-bit electrically programmable FAMOS read-only memory
Author :
Frohman-Bentchkowsky, Dov
Abstract :
A floating-gate avalanche-injection m.o.s. (FAMOS) charge-storage device is used as the basic nonvolatile memory element. The memory is organized as 256 words of 8 bits, it is fully TTL compatible, and can be operated in both the static or dynamic mode. The memory array was successfully fabricated with silicon gate m.o.s. technology yielding functional devices with access times of 800 ns in the static mode and 500 ns in the dynamic mode of operation. The memory chip is assembled in a 24-lead dual-in-line package.
Keywords :
Metal-insulator-semiconductor devices; Read-only storage; Semiconductor storage devices; metal-insulator-semiconductor devices; read-only storage; semiconductor storage devices; Assembly; Decoding; Dielectrics; FETs; Fabrication; Nonvolatile memory; Packaging; Read only memory; Silicon; Testing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1971.1050191
