DocumentCode
875922
Title
A memory system based on surface-charge transport
Author
Engeler, William E. ; Tiemann, Jerome J. ; Baertsch, Richard D.
Volume
6
Issue
5
fYear
1971
Firstpage
306
Lastpage
313
Abstract
The surface-charge transistor (SCT) is an integrated-circuit element and involves a new concept for controlling the transfer of stored electrical charge along the surface of a semiconductor. The experimental transient response of a large-geometry SCT is presented. Linear high-density arrays of surface-charge transistors may be utilized to form digital or analog shift registers. The experimental performance of a 14-bit shift register, which has been operated in both these modes, is given. By forming these units in a serpentine fashion, charge (information) may be transported back and forth between refresh circuits to form an array of cells. An experimental circuit of this type is presented. Using these techniques a digital serial memory of high density may be constructed. Using standard metalization linewidths and tolerances a cell size of 2 mil/SUP 2/ per bit is shown to be feasible.
Keywords
Integrated circuits; Semiconductor storage devices; Semiconductor storage systems; Shift registers; Surface phenomena; Transistors; integrated circuits; semiconductor storage devices; semiconductor storage systems; shift registers; surface phenomena; transistors; Costs; Electrons; Fabrication; Instruments; Integrated circuit interconnections; Power system interconnection; Shift registers; Snow; Solid state circuits; Testing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1971.1050192
Filename
1050192
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