• DocumentCode
    875922
  • Title

    A memory system based on surface-charge transport

  • Author

    Engeler, William E. ; Tiemann, Jerome J. ; Baertsch, Richard D.

  • Volume
    6
  • Issue
    5
  • fYear
    1971
  • Firstpage
    306
  • Lastpage
    313
  • Abstract
    The surface-charge transistor (SCT) is an integrated-circuit element and involves a new concept for controlling the transfer of stored electrical charge along the surface of a semiconductor. The experimental transient response of a large-geometry SCT is presented. Linear high-density arrays of surface-charge transistors may be utilized to form digital or analog shift registers. The experimental performance of a 14-bit shift register, which has been operated in both these modes, is given. By forming these units in a serpentine fashion, charge (information) may be transported back and forth between refresh circuits to form an array of cells. An experimental circuit of this type is presented. Using these techniques a digital serial memory of high density may be constructed. Using standard metalization linewidths and tolerances a cell size of 2 mil/SUP 2/ per bit is shown to be feasible.
  • Keywords
    Integrated circuits; Semiconductor storage devices; Semiconductor storage systems; Shift registers; Surface phenomena; Transistors; integrated circuits; semiconductor storage devices; semiconductor storage systems; shift registers; surface phenomena; transistors; Costs; Electrons; Fabrication; Instruments; Integrated circuit interconnections; Power system interconnection; Shift registers; Snow; Solid state circuits; Testing;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1971.1050192
  • Filename
    1050192