Title :
Trnsient Response of a Small-Signal Microwave GaAs FET to X-Rays
Author :
Castle, J.G., Jr. ; Armendariz, M.G. ; Smith, D.R. ; Schuster, G.R.
Author_Institution :
Sandia National Laboratories, Albuquerque, NM 87185
Abstract :
Microwave power output of a submicron-gate GaAs FET, containing no buffer layer, is observed to recover within one hundred nanoseconds after the x-ray pulse from a FEBETRON 705 source. The FET is formed by implanting ions into the substrate, grown with a liquid encapsulated Czochralski method and doped lightly with chromium.
Keywords :
Bipolar transistors; Buffer layers; Circuit analysis; Circuit testing; Contracts; Gallium arsenide; Microwave FETs; Optical wavelength conversion; SPICE; X-rays;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333561
