Photo-Induced Coplanar Waveguide RF Switch and Optical Crosstalk on High-Resistivity Silicon Trap-Rich Passivated Substrate

Author

Ben Ali, K. ; Neve, Cesar Roda ; Gharsallah, Ali ; Raskin, Jean-Pierre

Author_Institution

Electr. Dept., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3478

Lastpage

3484

Abstract

A continuous-wave mode optically controlled coplanar waveguide radio frequency (RF) switch on high-resistivity silicon substrate with and without trap-rich polysilicon (poly-Si) layer is investigated. Because of the local poly-Si trap-rich layer, we experimentally show the important reduction of optical crosstalk without degrading the photo-controlled RF switch performance. A photo-induced plasma confinement by locally etching the poly-Si layer to control the photogenerated free carriers and their lateral diffusion is realized. Optical crosstalk between two coplanar waveguide RF switches is reduced by at 20 GHz.

Keywords

coplanar waveguides; elemental semiconductors; etching; optical crosstalk; optical switches; passivation; plasma confinement; silicon; Si; continuous-wave mode optically controlled coplanar waveguide RF switch; etching; frequency 20 GHz; high-resistivity silicon trap-rich passivated substrate; lateral diffusion; local polySi trap-rich layer; optical crosstalk; photocontrolled RF switch performance; photogenerated free carrier; photoinduced coplanar waveguide RF switch; photoinduced plasma confinement; trap-rich polysilicon layer; Attenuation; Coplanar waveguides; Optical attenuators; Optical crosstalk; Optical switches; Radio frequency; Substrates; Coplanar waveguide (CPW) radio frequency (RF) optical switch; high-resistivity (HR) Si substrate; lateral carrier diffusion; optical crosstalk; trap rich;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2279686

Filename

6590024