DocumentCode :
876055
Title :
A Mode-Matched Silicon-Yaw Tuning-Fork Gyroscope With Subdegree-Per-Hour Allan Deviation Bias Instability
Author :
Zaman, Mohammad Faisal ; Sharma, Ajit ; Hao, Zhili ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Volume :
17
Issue :
6
fYear :
2008
Firstpage :
1526
Lastpage :
1536
Abstract :
In this paper, we report on the design, fabrication, and characterization of an in-plane mode-matched tuning-fork gyroscope (M2-TFG). The M2-TFG uses two high-quality-factor (Q) resonant flexural modes of a single crystalline silicon mi- crostructure to detect angular rate about the normal axis. Operating the device under mode-matched condition, i.e., zero-hertz frequency split between drive and sense modes, enables a Q -factor mechanical amplification in the rate sensitivity and also improves the overall noise floor and bias stability of the device. The M2 -TFG is fabricated on a silicon-on-insulator substrate using a combination of device and handle-layer silicon etching that precludes the need for any release openings on the proof-mass, thereby maximizing the mass per unit area. Experimental data indicate subdegree-per-hour Brownian noise floor with a measured Allan deviation bias instability of 0.15deg /hr for a 60-mum-thick 1.5 mm X 1.7 mm footprint M2-TFG prototype. The gyroscope exhibits an open-loop rate sensitivity of approximately 83 mV/deg/s in vacuum. [2007-0100].
Keywords :
Q-factor; crystal microstructure; etching; gyroscopes; silicon-on-insulator; stability; substrates; Q-factor mechanical amplification; bias stability; handle-layer silicon etching; high-quality-factor; in-plane mode-matched tuning-fork gyroscope; mode-matched silicon-yaw tuning-fork gyroscope; overall noise floor; resonant flexural mode; silicon-on-insulator substrate; single crystalline silicon microstructure; subdegree-per-hour Allan deviation bias instability; Mode-matching; silicon-on-insulator (SOI); tuning fork; vibratory microgyroscope;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2008.2004794
Filename :
4636724
Link To Document :
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