• DocumentCode
    876063
  • Title

    Grafted InGaAsP light emitting diodes on glass channel waveguides

  • Author

    Yi-Yan, A. ; Chan, W.K. ; Ravi, T.S. ; Gmitter, T.J. ; Bhat, Ritesh ; Yoo, Kwae Hwan

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    28
  • Issue
    4
  • fYear
    1992
  • Firstpage
    341
  • Lastpage
    342
  • Abstract
    Optically pumped lambda =1.3 mu m InGaAsP LEDs have been integrated with glass channel waveguides using epitaxial liftoff. Coupling of light from the grafted LEDs to the waveguides has been achieved with the aid of an overlayer film with tapered ends. Under pulsed operation, devices exhibit a laser-like threshold but without spectral narrowing.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; 1.3 micron; InGaAsP; LEDs; OEIC; epitaxial liftoff; glass channel waveguides; grafting; hybrid integration; laser-like threshold; light emitting diodes; optical pumping; optical waveguides; overlayer film; pulsed operation; tapered ends;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920213
  • Filename
    126352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=876063