Title :
Grafted InGaAsP light emitting diodes on glass channel waveguides
Author :
Yi-Yan, A. ; Chan, W.K. ; Ravi, T.S. ; Gmitter, T.J. ; Bhat, Ritesh ; Yoo, Kwae Hwan
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Optically pumped lambda =1.3 mu m InGaAsP LEDs have been integrated with glass channel waveguides using epitaxial liftoff. Coupling of light from the grafted LEDs to the waveguides has been achieved with the aid of an overlayer film with tapered ends. Under pulsed operation, devices exhibit a laser-like threshold but without spectral narrowing.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; 1.3 micron; InGaAsP; LEDs; OEIC; epitaxial liftoff; glass channel waveguides; grafting; hybrid integration; laser-like threshold; light emitting diodes; optical pumping; optical waveguides; overlayer film; pulsed operation; tapered ends;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920213
