DocumentCode
876081
Title
High speed waveguide-integrated photodiodes grown by metal organic molecular beam epitaxy
Author
Emeis, N. ; Schier, M. ; Hoffmann, Lionel ; Heinecke, H. ; Baur, B.
Author_Institution
Siemens Res. Labs., Munchen, Germany
Volume
28
Issue
4
fYear
1992
Firstpage
344
Lastpage
345
Abstract
Using InP/InGaAs layers grown by metal organic molecular beam epitaxy (MOMBE) on semi-insulating (SI) InP substrate the authors have fabricated waveguide-integrated pin-photodiodes working on the principle of evanescent field coupling. A 3 dB cutoff frequency of 9.6 GHz has been found in a 50 Omega system. The 100 mu m long diodes exhibit a capacitance of <0.1 pF at -5 V bias. In addition design criteria are given to improve the speed of the devices.
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; integrated optoelectronics; p-i-n diodes; photodiodes; semiconductor growth; 0.1 pF; 100 micron; 12.7 GHz; 9.6 GHz; InP substrate; InP-InGaAs; MOMBE; RC limited bandwidth; cutoff frequency; design criteria; evanescent field coupling; metal organic molecular beam epitaxy; p-i-n photodiodes; waveguide-integrated photodiodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920215
Filename
126354
Link To Document