Title :
M.O.S. analogue memory element
Author :
Ryan, W.D. ; Reid, Alastair
Author_Institution :
Queen´s University of Belfast, Department of Electrical Engineering, Belfast, UK
Abstract :
A method is proposed which may permit extensive adaptive structures to be fabricated from large-scale integrated circuits. The method involves using the gate charge of an m.o.s.t. as an analogue memory element and changing its magnitude by ionisation. Some initial experimental results for a single device are quoted.
Keywords :
adaptive systems; analogue computers; integrated circuits; storage devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680058
