Title :
Microwave conductivity of polar semiconductors in the presence of a high electric field
Author :
Kopetz, H. ; Pötzl, H.W.
Author_Institution :
Technische Hochschule Wien, Institute of Physical Electronics, Wien, Austria
Abstract :
Theoretical results are presented for the small-signal microwave conductivity of nInSb at TL = 77°K in the presence of a high d.c. field directed parallel or perpendicular to the microwave field. Reasonable agreement with experiments by Richter and Bonek is demonstrated. At frequencies below 50GHz, the parallel microwave conductivity is smaller than the perpendicular one, whereas the opposite is true at 70GHz.
Keywords :
III-V semiconductors; electrical conductivity; high-frequency measurement; indium compounds; semiconductors; transport processes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680063
