DocumentCode :
876282
Title :
n-inversion layers on oxidized p-type silicon
Author :
Leuenberger, F.
Volume :
53
Issue :
11
fYear :
1965
Firstpage :
1761
Lastpage :
1761
Keywords :
Capacitance; Conductivity; Electrodes; Extraterrestrial phenomena; Impurities; Oxidation; Silicon compounds; Space charge; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.4380
Filename :
1446310
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=876282
