DocumentCode :
876481
Title :
Application of the reverse emitter-base breakdown and saturation of silicon planar transistors
Author :
Johnson, Steven G.
Author_Institution :
Regional Medical Physics Dept., Sheffield, UK
Volume :
4
Issue :
6
fYear :
1968
Firstpage :
109
Lastpage :
110
Abstract :
Simple 3-terminal full-wave rectifiers have been designed that depend on the saturation and reverse emitter-base voltage breakdown of silicon planar transistors. The rectifier is used in a transition detector that generates an output pulse when the signal input changes between two voltage levels.
Keywords :
transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19680086
Filename :
4210034
Link To Document :
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