DocumentCode
876481
Title
Application of the reverse emitter-base breakdown and saturation of silicon planar transistors
Author
Johnson, Steven G.
Author_Institution
Regional Medical Physics Dept., Sheffield, UK
Volume
4
Issue
6
fYear
1968
Firstpage
109
Lastpage
110
Abstract
Simple 3-terminal full-wave rectifiers have been designed that depend on the saturation and reverse emitter-base voltage breakdown of silicon planar transistors. The rectifier is used in a transition detector that generates an output pulse when the signal input changes between two voltage levels.
Keywords
transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19680086
Filename
4210034
Link To Document