Title :
Application of the reverse emitter-base breakdown and saturation of silicon planar transistors
Author :
Johnson, Steven G.
Author_Institution :
Regional Medical Physics Dept., Sheffield, UK
Abstract :
Simple 3-terminal full-wave rectifiers have been designed that depend on the saturation and reverse emitter-base voltage breakdown of silicon planar transistors. The rectifier is used in a transition detector that generates an output pulse when the signal input changes between two voltage levels.
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680086