• DocumentCode
    876481
  • Title

    Application of the reverse emitter-base breakdown and saturation of silicon planar transistors

  • Author

    Johnson, Steven G.

  • Author_Institution
    Regional Medical Physics Dept., Sheffield, UK
  • Volume
    4
  • Issue
    6
  • fYear
    1968
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    Simple 3-terminal full-wave rectifiers have been designed that depend on the saturation and reverse emitter-base voltage breakdown of silicon planar transistors. The rectifier is used in a transition detector that generates an output pulse when the signal input changes between two voltage levels.
  • Keywords
    transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680086
  • Filename
    4210034