Title :
An application of device modeling to microwave power transistors
Author :
Lange, Julius ; Carr, William N.
Abstract :
A new approach for modelling bipolar transistors in the microwave region under class-C conditions is presented. The following features were combined in the modelling procedure: 1) modelling at microwave frequencies, 2) modelling under large-signal class-C conditions, 3) modelling under mismatched conditions, and 4) correlation between measurements and modelling results. A model has been economically implemented and sufficient accuracy was obtained for: 1) device modelling over a range of operating conditions for which direct experimental characterization is not economically obtainable, 2) optimizing decisions for improved device fabrication, and 3) computer optimization of matching networks for microwave transistors.
Keywords :
Bipolar transistors; Microwave devices; Optimisation; Semiconductor device models; bipolar transistors; microwave devices; optimisation; semiconductor device models; Bipolar transistors; Computer networks; Fabrication; Frequency measurement; Microwave devices; Microwave frequencies; Microwave measurements; Microwave transistors; Power generation economics; Power transistors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1972.1050243
