مرکز منطقه ای اطلاع رساني علوم و فناوري - Initial growth of domains in Gunn oscillators

DocumentCode :

876550

Title :

Initial growth of domains in Gunn oscillators

Author :

Lundström, I.

Author_Institution :

Chalmers University of Technology, Research Laboratory of Electronics, Gothenburg, Sweden

Volume :

Issue :

fYear :

1968

Firstpage :

120

Lastpage :

121

Abstract :

An expression is given for the initial growth of domain voltage. A condition for domain growth is also derived.

Keywords :

Gunn effect; crystal properties; oscillators; semiconductors;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19680094

Filename :

4210043

Link To Document :