Title :
(110)-oriented GaAs MESFETs
Author :
Pao, Y.C. ; Ou, Weiming ; Harris, J.S., Jr.
Author_Institution :
Varian Associates, Santa Clara, CA, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
GaAs metal semiconductor field-effect transistors (MESFETs) have been successfully fabricated on molecular-beam epitaxial (MBE) films grown on the off-axis
Keywords :
III-V semiconductors; Schottky gate field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; 0.12 micron; 0.18 micron; 0.4 micron; 23 GHz; 56 GHz; GaAs; MBE; MESFET devices; MESFETs; contact layer; device quality two-dimensional MBE growth; doping density; extrinsic transconductance; high-speed digital circuits; low-gate leakage current; metal semiconductor field-effect transistors; microwave power FET; output conductance; unity-current-gain cutoff frequency; Conducting materials; Cutoff frequency; Doping; FETs; Gallium arsenide; Leakage current; MESFETs; Molecular beam epitaxial growth; Semiconductor films; Substrates;
Journal_Title :
Electron Device Letters, IEEE
