Title :
Ion-implanted complementary MOS transistors in low-voltage circuits
Author :
Swanson, Richard M. ; Meindl, James D.
fDate :
4/1/1972 12:00:00 AM
Abstract :
Simple but reasonably accurate equations are derived which describe MOS transistor operation in the weak inversion region near turn-on. These equations are used to find the transfer characteristics of complementary MOS inverters. The smallest supply voltage at which these circuits will function is approximately 8kT/q. A boron ion implantation is used for adjusting MOST turn-on voltage for low-voltage circuits.
Keywords :
Field effect transistors; Ion implantation; field effect transistors; ion implantation; Boron; Dielectric substrates; Digital circuits; Electrons; Inverters; Ion implantation; Low voltage; MOSFETs; Poisson equations; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1972.1050260
