DocumentCode :
876735
Title :
Electron induced surface damage in silicon transistors
Author :
Brucker, G.J. ; Dennehy, W. ; Holmes-Siedle, A.G.
Author_Institution :
David Sarnoff Laboratories, Princeton, N.J.
Volume :
53
Issue :
11
fYear :
1965
Firstpage :
1800
Lastpage :
1800
Keywords :
Cutoff frequency; Electron beams; Electron emission; Energy measurement; Equations; Frequency measurement; Ionization; Ionizing radiation; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.4425
Filename :
1446355
Link To Document :
بازگشت