Title :
Effect of the spatial gain and intensity variations on a two-section Fabry-Perot semiconductor laser: an analytical study
Author :
Thedrez, Bruno J. ; Lee, Chi H.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
3/1/1993 12:00:00 AM
Abstract :
An analytical static model for two-section Fabry-Perot semiconductor lasers is presented. The spatial dependence of both the field and the gain is fully taken into account. The cases of either a loss or a gain segment coupled to a main gain section are both considered. The bistable and linear behaviors above threshold are analytically described. The validity of the model extends to any homogeneously broadened laser
Keywords :
laser theory; optical bistability; optical losses; semiconductor device models; semiconductor lasers; spectral line breadth; above threshold; analytical static model; bistable behaviours; gain segment; homogeneously broadened laser; intensity variations; linear behaviors; loss segment; main gain section; spatial dependence; spatial gain; two-section Fabry-Perot semiconductor laser; Analytical models; Bandwidth; Energy consumption; Equations; Fabry-Perot; Laser modes; Laser noise; Laser theory; Pump lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
