Analysis of InGaAs p-i-n photodiode frequency response

Author

Sabella, Roberto ; Merli, Stefano

Author_Institution

Ericsson-Fatme, Rome, Italy

Volume

29

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

906

Lastpage

916

Abstract

The frequency response of a InGaAs p-i-n diode was analyzed to better characterize the high-speed performances required for high-bit-rate optical communication systems. The carrier concentration and the photocurrent density in the intrinsic region were obtained analytically. The derived equations led to the frequency response which takes into account both the influence of the electric field on the carrier velocities and their nonuniform generation. In addition, the impulse response was computed by inverse Fourier transform techniques. Comparing the results with those obtained by assuming the carrier velocities independently of the electric field, discrepancies were found in the electrical power bandwidth up to 25%, and in the FWHM up to 45%

Keywords

Fourier transform optics; III-V semiconductors; carrier density; frequency response; gallium arsenide; indium compounds; optical communication equipment; p-i-n photodiodes; InGaAs; InGaAs p-i-n photodiode frequency response; carrier concentration; carrier velocities; electric field; electrical power bandwidth; high-bit-rate optical communication systems; high-speed performances; impulse response; intrinsic region; inverse Fourier transform techniques; nonuniform generation; photocurrent density; semiconductors; Equations; Fourier transforms; Frequency response; Indium gallium arsenide; Nonuniform electric fields; Optical fiber communication; P-i-n diodes; PIN photodiodes; Performance analysis; Photoconductivity;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.206574

Filename

206574