• DocumentCode
    877006
  • Title

    Application of 2-dimensional solutions of the Shockley-Poisson equation to inversion-layer m.o.s.t. devices

  • Author

    Loeb, H.W. ; Andrew, Richard ; Love, W.

  • Author_Institution
    College of Aeronautics, Cranfield, UK
  • Volume
    4
  • Issue
    17
  • fYear
    1968
  • Firstpage
    352
  • Lastpage
    354
  • Abstract
    A model for inversion-layer m.o.s.t.s is outlined which avoids the usual gradual-channel approximation by the use of 2-dimensional solutions to the Shockley-Poisson and Laplace equations governing the field distribution. Computed I/V and C/V characteristics and potential-distribution; diagrams are shown for a particular device geometry.
  • Keywords
    transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680277
  • Filename
    4210094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=877006