Title :
Helicon diagnostic of acoustoelectric domains in InSb
Author_Institution :
Technische Hochschule Wien, Institute of Physical Electronics, Wien, Austria
Abstract :
In long samples of nInSb showing coherent acoustoelectric oscillations at 77°K, helicon transmission at 35GHz indicates a carrier-depleted travelling domain near the cathode. Further down stream, low-mobility carriers are generated by breakdown and accumulate in a stationary domain near the anode. Shorter samples exhibit distributed domains which could explain transverse breakdown.
Keywords :
III-V semiconductors; acoustoelectric effects; indium compounds; semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680279
