DocumentCode :
877033
Title :
Waves in semiconductors with nonconstant mobility
Author :
Bl¿¿tekj¿¿r, K.
Author_Institution :
University of Trondheim, Norwegian Institute of Technology, Department of Electrical Engineering, Trondheim, Norway
Volume :
4
Issue :
17
fYear :
1968
Firstpage :
357
Lastpage :
358
Abstract :
It is pointed out that the usual assumption of field-dependent mobility is incorrect when diffusion is included in the current equation. In general, the mobility depends on the carrier temperature, which should be included as a separate variable. However, at low frequencies and long wavelengths, the carrier temperature, and hence the mobility, may be taken as local and instantaneous functions of the average carrier velocity, but not of the electric field. This modification is shown to have important implications on the small-signal stability.
Keywords :
semiconductor devices; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19680280
Filename :
4210097
Link To Document :
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