Power and linearity characteristics of GaN MISFETs on sapphire substrate

Author

Chini, A. ; Wittich, J. ; Heikman, S. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA

Volume

25

Issue

2

fYear

2004

Firstpage

55

Lastpage

57

Abstract

The improvement of device performance arising from the adoption of a MIS gate structure in GaN field-effect transistor (FET) is presented. GaN MISFET/MESFET devices were fabricated on sapphire substrate with and without the insertion of a thin SiN layer on device surface. The MISFET device showed improved device characteristic due to significant reduction in device gate leakage with respect to the standard MESFET structure. Measured power and linearity performance showed promising results. Under single-tone testing at 4 GHz, device yielded saturated output power 6.2 W/mm with 55% peak power added efficiency. When tested with two-tone signal device maintained a carrier to third order intermodulation ratio of 30 dBc up to power levels of 1.8 W/mm with 40% power added efficiency.

Keywords

III-V semiconductors; MISFET; gallium compounds; leakage currents; wide band gap semiconductors; GaN; GaN MESFET device; GaN MISFET device; MIS gate; MISFETs; SiN; device performance; gate leakage; linearity characteristics; microwave power field-effect transistor; output power; peak power; power characteristics; sapphire substrate; single-tone testing; third order intermodulation ratio; two-tone signal device; FETs; Gallium nitride; Gate leakage; Linearity; MESFETs; MISFETs; Power generation; Power measurement; Silicon compounds; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.822668

Filename

1263625