Title :
Modified theory of the current/voltage relation in silicon p--n junctions
Author :
Faulkner, E.A. ; Buckingham, M.J.
Author_Institution :
University of Reading, J.J. Thomson Laboratory, Reading, UK
Abstract :
If the theory of Sah, Noyce and Shockley is modified by assuming the recombination centres to be nonuniformly distributed, a current/voltage relation can be obtained in the form I ∝ exp (eV/mkT), where m lies between 1 and 2.
Keywords :
semiconductor junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680282
