A memory-cell array with normally off-type Schottky-Barrier FET´s

The potential of the metal-semiconductor field-effect transistor (MESFET) as a device for a dc-stable fixed-address memory-cell array is described. The implementation of dc-coupled circuits with `normally off´ MESFET´s having 1-/spl mu/m gate lengths yields several inherent advantages: high packing density, low power dissipation, low-power-delay time product, and low number of masking steps for transistors, diodes, and resistors. To demonstrate these advantages a fixed-address memory array with dc-stable cells has been chosen. The integrated cell area is 2.6 mil. For a supply voltage V/SUB s/=0.6 V, a standby power dissipation per cell of 5 /spl mu/W has been achieved. The cell switches within 4 ns. The differential sense current in the digit lines is /spl Delta/I/SUB s/=6 /spl mu/A.