DocumentCode :
877086
Title :
Extraction of material parameters in film bulk acoustic resonator (FBAR) using genetic algorithm
Author :
Lee, Jeongheum ; Jung, Jaeyong ; Park, Jong-Il ; Kim, Hyeongdong
Author_Institution :
Graduate Sch. of Hanyang Univ., Seoul, South Korea
Volume :
25
Issue :
2
fYear :
2004
Firstpage :
67
Lastpage :
69
Abstract :
The extraction of material parameters from the given (or measured) input impedance of film bulk acoustic resonators (FBARs) using a genetic algorithm (GA) is proposed. After studying the effect of material parameter changes on impedance responses, resonance characteristics of FBARs are used to extract the material parameters. The extracted result agrees very well with the given material parameters.
Keywords :
acoustic resonators; bulk acoustic wave devices; circuit resonance; genetic algorithms; impedance matching; film bulk acoustic resonator; film bulk acoustic resonators; genetic algorithm; impedance responses; input impedance; material parameters extraction; piezoelectric material parameter extraction; resonance characteristics; Acoustic devices; Acoustic materials; Acoustic propagation; Bandwidth; Film bulk acoustic resonators; Genetic algorithms; Impedance; Piezoelectric materials; Resonance; Resonant frequency;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2003.819911
Filename :
1263629
Link To Document :
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