Title :
High-frequency transistor modeling for circuit design
Author :
Macnee, A.B. ; Talsky, R.J.
Abstract :
It has been found that certain high-frequency transistor types cannot be modeled accurately over wide frequency ranges with the hybrid pi or high-frequency T models even though reasonable extrinsic elements are added. Modifying the hybrid pi by replacing r/SUB /spl pi//C/SUB /spl pi// with an RC ladder extends the useful frequency range for that model to f/SUB T//2. A computer optimization program is used to determine the appropriate element values for the extended hybrid-pi model. For the 2N918, a two-section ladder gives a 3 : 1 improvement in the usable frequency range of the model.
Keywords :
Optimisation; Semiconductor device models; Transistors; optimisation; semiconductor device models; transistors; Admittance measurement; Circuit analysis computing; Circuit synthesis; Design optimization; Frequency measurement; Integrated circuit modeling; Integrated circuit packaging; Linear circuits; Shape measurement; Solid modeling;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1972.1050311
