Title :
Optical subthreshold current method for extracting the interface states in MOS systems
Author :
Kim, Myung Su ; Nam, I.C. ; Kim, Hong Tak ; Shin, H.T. ; Kim, T.E. ; Park, H.S. ; Kim, Kwang Soon ; Kim, Ki Hyun ; Choi, J.B. ; Min, Kyou Sik ; Kim, D.J. ; Kang, D.W. ; Kim, Dong Myong
Author_Institution :
Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea
Abstract :
Optical subthreshold current method (OSCM) is proposed for characterizing the interface states in MOS systems using the current-voltage characteristics under a photonic excitation. An optical source with a subbandgap (E/sub ph/\n\n\t\t
Keywords :
MOSFET; electron traps; interface states; semiconductor device measurement; MOS capacitor; MOS systems; U-shaped distribution; current-voltage characteristics; interface states; interface trap density; n-type MOSFETs; optical source; optical subthreshold current method; p-type MOSFETs; photonic energy; photonic excitation; photoresponsive energy band; poly-silicon gate; silicon bandgap; subbandgap photon; subthreshold slope; Capacitance; Interface states; MOS capacitors; MOSFET circuits; Optical pumping; Optical saturation; Photonic band gap; Silicon; Subthreshold current; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.822673
