Title :
Electrical Switching of Al-Doped Amorphous SiOx Thin Films
Author :
Jian-Shiou Huang ; Yu-Chuan Shih ; Li-Ming Chen ; Ting-Yi Lin ; Shih-Chin Chang ; Tsung-Shune Chin
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
This paper´s investigations aimed to tackle crystal defects, which lead to reliability issues of resistive memory and we explored films of Al-doped amorphous SiOx as homogeneous matrix. The electrical resistance switching of Pt/Si(Al)Ox/TiN stacks was studied. After a forming process, the SET and RESET voltages are 2.2 and 1.1 V, respectively. The high- and low-resistance states are distinguishable with a resistance ratio ~102 and stable for at least 500 Hz and retaining for over 104 s under an electrical stress of 0.1 V. Because of the formation of bubbles, we tried to use larger current compliance to unveil the possible mechanisms based on filament model and the switching process occurs near the Pt/Si(Al)Ox interface. Finally, we proposed a possible conduction mechanism to describe the resistive switching behavior for Pt/Si(Al)Ox/TiN stacks.
Keywords :
aluminium; amorphous state; crystal defects; electric resistance; electrical resistivity; forming processes; platinum; random-access storage; silicon compounds; thin films; titanium compounds; Pt-Si(Al)Ox-TiN; RESET voltage; SET voltage; aluminum-doped amorphous silicon dioxide thin films; bubbles; crystal defects; electrical resistance switching; electrical stress; filament model; forming process; high-resistance states; homogeneous matrix; low-resistance states; random access memory; reliability; resistance ratio; resistive memory; voltage 1.1 V; voltage 2.2 V; Films; Resistance; Solids; Switches; Switching circuits; Tin; Al-doped amorphous silicon oxide; effect of compliance current; resistive switching (RS) random access memory;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2014.2305721
