Title :
GaAs MESFET device dependences on ion-implant tilt and rotation angles
Author :
Rosemblatt, D.H. ; Hitchens, W.R. ; Anholt, Robert E. ; Sigmon, Thomas W.
Author_Institution :
Watkins-Johnson Co., Palo Alto, CA, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
Lightly Cr-doped liquid-encapsulated Czochralski (LEC) GaAs wafers were implanted with 5*10/sup 12/ 100-keV Si/sup 29/ ions/cm/sup 2/ at tilt angles between 0 and 13 degrees and at rotation angles between 0 and 45 degrees C. Capacitance-voltage measurements were then made to determine electron profiles. It was found that cross-wafer device uniformity can be improved using implant tilt angles greater than 9 degrees . For microwave MESFET devices, the maximum transconductances at low I/sub DS/ are achieved using tilt angles greater than 6 degrees and rotation angles greater than 30 degrees .<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; 100 keV; GaAs:Cr,Si; cross-wafer device uniformity; electron profiles; ion-implant tilt; liquid-encapsulated Czochralski; microwave MESFET devices; rotation angles; transconductances; Capacitance measurement; Capacitance-voltage characteristics; Electrons; Gallium arsenide; Implants; Impurities; Laboratories; MESFETs; Rotation measurement; Tail;
Journal_Title :
Electron Device Letters, IEEE
