A 0.5-W CW IMPATT diode amplifier for high-capacity 11-GHz FM radio-relay equipment

Author

Komizo, Hidemitsu ; Ito, Yukio ; Ashida, Hideo ; Shinoda, Masaichi

Volume

8

Issue

1

fYear

1973

Firstpage

14

Lastpage

20

Abstract

A stable CW reflection-type Si-IMPATT diode amplifier has been developed as a transmitting high-power amplifier for the 11-GHz-band FM radio-relay system. It is a solid-state 960-channel system with a nominal transmitting power of 500 mW. The circuit design of the amplifier with a unique stabilizing circuit which provides unconditionally stable operation, is described. Also described are the FM noise contributions due to the biasing circuit parameters and experimental results of the FM noise of a locked oscillator and a negative resistance amplifier. Applications of the amplifiers in other frequency bands are described along with data obtained from the amplifiers for use in communication systems.

Keywords

IMPATT diodes; Microwave amplifiers; Microwave links; Solid-state microwave circuits; microwave amplifiers; microwave links; solid-state microwave circuits; Circuit noise; Coaxial components; Frequency; High power amplifiers; Impedance; Laboratories; Radiofrequency amplifiers; Semiconductor device noise; Semiconductor diodes; Thermal resistance;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1973.1050339

Filename

1050339