Title :
The P-I-N Modulator, an Electrically Controlled Attenuator for MM and Sub-MM Waves
fDate :
5/1/1960 12:00:00 AM
Abstract :
The construction and performance of a millimeter wave modulator are described. The main part of the modulator consists of a p-i-n germanium structure inserted into a rectangular waveguide. A modulation depth of 11 db could be obtained at frequencies up to 5 kc, this modulation being caused for the greatest part by attenuation.
Keywords :
Attenuation; Attenuators; Charge carriers; Frequency modulation; Germanium; Magnetic fields; Magnetic modulators; Microwave devices; PIN photodiodes; Semiconductor diodes;
Journal_Title :
Microwave Theory and Techniques, IRE Transactions on
DOI :
10.1109/TMTT.1960.1125240
