DocumentCode
877571
Title
The P-I-N Modulator, an Electrically Controlled Attenuator for MM and Sub-MM Waves
Volume
8
Issue
3
fYear
1960
fDate
5/1/1960 12:00:00 AM
Firstpage
325
Lastpage
327
Abstract
The construction and performance of a millimeter wave modulator are described. The main part of the modulator consists of a p-i-n germanium structure inserted into a rectangular waveguide. A modulation depth of 11 db could be obtained at frequencies up to 5 kc, this modulation being caused for the greatest part by attenuation.
Keywords
Attenuation; Attenuators; Charge carriers; Frequency modulation; Germanium; Magnetic fields; Magnetic modulators; Microwave devices; PIN photodiodes; Semiconductor diodes;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IRE Transactions on
Publisher
ieee
ISSN
0097-2002
Type
jour
DOI
10.1109/TMTT.1960.1125240
Filename
1125240
Link To Document